TPCF8103 2006-11-16 1 toshiba field effect transistor silicon p chann el mos type (u-mos iii) TPCF8103 notebook pc applications portable equipment applications ? low drain-source on resistance: r ds (on) = 72 m ? (typ.) ? high forward transfer admittance: |y fs | = 4.7s (typ.) ? low leakage current: i dss = -10 a (max) (v ds = -20 v) ? enhancement-model: v th = -0.5 to -1.2 v (v ds = -10 v, i d = -200 a) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss -20 v drain-gate voltage (r gs = 20 k ) v dgr -20 v gate-source voltage v gss 8 v dc (note 1) i d -2.7 drain current pulse (note 1) i dp -10.8 a drain power dissipation (t = 5 s) (note 2a) p d 2.5 w drain power dissipation (t = 5 s) (note 2b) p d 0.7 w single pulse avalanche energy (note 3) e as 1.2 mj avalanche current i ar -1.35 a repetitive avalanche energy (note 4) e ar 0.25 mj channel temperature t ch 150 c storage temperature range t stg -55~150 c note: for (note 1), (note 2), (note 3), (note 4) and (note 5), please refer to the next page. using continuously under heavy loads (e .g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliabilit y handbook (?handling precautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic sensit ive device. please handle with caution. unit: mm jedec D jeita D toshiba 2-3u1a weight: 0.011 g (typ.) circuit configuration 8 6 1 2 3 7 5 4
TPCF8103 2006-11-16 2 thermal characteristics characteristics symbol max unit thermal resistance, channel to ambient (t = 5 s) (note 2a) r th (ch-a) 50.0 c/w thermal resistance, channel to ambient (t = 5 s) (note 2b) r th (ch-a) 178.6 c/w marking (note 5) note 1: please use devices on condition that the channel temperature is below 150c. note 2: (a) device mounted on a glass-epoxy board (a) (b) device mounted on a glass-epoxy board (b) note 3: v dd = -16 v, t ch = 25c (initial), l = 0.5 mh, r g = 25 , i ar = -1.35 a note 4: repetitive rating: pulse width li mited by maximum channel temperature. note 5: black round marking ? ? locates on the left lower side of part s number ?f3c? indicates terminal no.1. (b) fr-4 25.4 25.4 0.8 (unit: mm) (a) fr-4 25.4 25.4 0.8 (unit: mm) part no. (or abbreviation code) f3c a line indicates lead (pb)-free package or lead (pb)-free finish. lot code (month) lot no. (weekly code) pin #1 lot code (year) product-specific code
TPCF8103 2006-11-16 3 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 8 v, v ds = 0 v ? ? 10 a drain cut-off current i dss v ds = -20 v, v gs = 0 v ? ? -10 a v (br) dss i d = -10 ma, v gs = 0 v -30 ? ? drain-source breakdown voltage v (br) dsx i d = -10 ma, v gs = 8 v -12 ? ? v gate threshold voltage v th v ds = -10 v, i d = -200 a -0.5 ? -1.2 v v gs = -1.8v, i d = -0.7 a ? 215 300 v gs = -2.5 v, i d = -1.4 a ? 110 160 drain-source on resistance r ds (on) v gs = -4.5 v, i d = -1.4a ? 72 110 m forward transfer admittance |y fs | v ds = -10 v, i d = -1.4 a 2.4 4.7 ? s input capacitance c iss ? 470 ? reverse transfer capacitance c rss ? 70 ? output capacitance c oss v ds = -10 v, v gs = 0 v, f = 1 mhz ? 80 ? pf rise time t r ? 5 ? turn-on time t on ? 9 ? fall time t f ? 8 ? switching time turn-off time t off duty < = 1%, t w = 10 s ? 26 ? ns total gate charge (gate-source plus gate-drain) q g ? 6 ? gate-source charge q gs ? 4 ? gate-drain (?miller?) charge q gd v dd ? -16 v, v gs = -5 v, i d = -2.7 a ? 2 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? -10.8 a forward voltage (diode) v dsf i dr = -2.7?a, v gs = 0 v ? ? 1.2 v r l = 7.14 v dd ? -10 v -5 v v gs 0 v 4.7 i d = -1.4 a v out
TPCF8103 2006-11-16 4 forward transfer admittance |y fs | (s) drain-source voltage v ds (v) drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) gate-source voltage v gs (v) i d ? v gs drain current i d (a) gate-source voltage v gs (v) v ds ? v gs drain current i d (a) |y fs | ? i d drain current i d (a) r ds (on) ? i d drain-source on resistance r ds (on) (m ) 0 0 ? 1 ? 2 ? 3 ? 4 ? 5 ? 2 ? 4 ? 6 ? 8 ? 10 v gs = ? 1.5 v ? 1.8 ? 2 ? 2.5 ? 2.8 ? 3 ? 3.5 ? 4 ? 4.5 ? 5 common source ta = 25c pulse test 0 0 ? 2 ? 4 ? 6 ? 8 ? 0.2 ? 0.4 ? 0.6 ? 0.8 ? 1.0 common source ta = 25c pulse test i d = ? 2.7 a ? 1.4 a ? 0.7 a 1 ? 0.1 ? 1 ? 10 10 100 ta = ? 55c ta = 100c ta = 25c common source v ds = ? 10 v pulse test 10 ? 0.1 ? 1 ? 10 100 1000 0 0 ? 0.2 ? 0.4 ? 0.6 ? 0.8 ? 1.0 ? 1 ? 2 ? 3 ? 4 ? 5 v gs = ? 1.5 v ? 1.8 ? 2 ? 2.5 ? 2.8 ? 3 ? 3.5 ? 4 ? 4.5 ? 5 common source ta = 25c pulse test 0 0 ? 0.5 ? 1.0 ? 1.5 ? 2.0 ? 2.5 ? 1 ? 2 ? 3 ? 4 ? 5 ta = ? 55c ta = 100c ta = 25c common source v ds = ? 10 v pulse test v gs = ? 4.5 v ? 2.5 v ? 1.8 v common source ta = 25c pulse test
TPCF8103 2006-11-16 5 drain power dissipation p d (w) gate threshold voltage v th (v) ambient temperature ta (c) r ds (on) ? ta drain-source on resistance r ds (on) (m ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) ambient temperature ta (c) v th ? ta ambient temperature ta (c) p d ? ta gate-source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) 10 ? 0.1 ? 1 ? 10 ? 100 100 1000 10000 c iss c oss c rss common source v gs = 0 v f = 1 mhz ta = 25c ? 0.0 ? 80 ? 40 0 40 80 120 160 ? 0.5 ? 1.0 ? 1.5 ? 2.0 common source v ds = ? 10 v i d = ? 200 a pulse test ? 1 0 ? 10 ? 100 0.4 0.8 1.2 1.6 2.0 common source ta = 25c pulse test v gs = 0 v ? 1 ? 1.8 ? 4.5 ? 2.5 0 0 ? 2 ? 4 ? 6 ? 8 ? 10 ? 4 ? 8 ? 12 ? 16 ? 20 0 ? 2 ? 4 ? 6 ? 8 ? 10 v ds ? 4 v ? 8 v v dd = ? 16 v v gs common source i d = ? 2.7 a ta = 25c pulse test 0 ? 80 ? 40 0 40 80 120 160 50 100 150 200 250 300 0 0 40 80 120 160 0.5 1.5 2 2.5 3 1 (1) t = 5 s (1) dc (2) t = 5 s (2) dc (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) common source pulse test v gs = ? 1.8 v ? 2.5 v ? 4.5 v i d = ? 0.7, ? 1.4, ? 2.7 a ? 0.7 a i d = ? 2.7 a i d = ? 1.4 a ? 0.7 a i d = ? 1.4 a
TPCF8103 2006-11-16 6 r th ? t w pulse width t w (s) safe operating area drain-source voltage v ds (v) drain current i d (a) transient thermal impedance r th (c/w) 1000 1 10 100 1m 10m 100m 1 10 100 1000 device mounted on a glass-epoxy board (b) (note 2b) device mounted on a glass-epoxy board (a) (note 2a) -0.1 -1 -10 -100 -0.1 -1 -10 -100 i d max (pulse) * 1 ms * 10 ms * v dss max *: single pulse ta = 25c curves must be derated linearly with increase in temperature
TPCF8103 2006-11-16 7 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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